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INFINEON BSC042NE7NS3GATMA1
Discrete Semiconductor Products

BSC320N20NS3GATMA1

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INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; SUPERSO8 5X6 PACKAGE; 32 MOHM;

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INFINEON BSC042NE7NS3GATMA1
Discrete Semiconductor Products

BSC320N20NS3GATMA1

Active
INFINEON

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 200 V ; SUPERSO8 5X6 PACKAGE; 32 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC320N20NS3GATMA1
Current - Continuous Drain (Id) @ 25°C36 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]29 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)125 W
Rds On (Max) @ Id, Vgs32 mOhm
Supplier Device PackagePG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.02
10$ 2.64
100$ 1.86
500$ 1.53
1000$ 1.42
2000$ 1.41
Digi-Reel® 1$ 4.02
10$ 2.64
100$ 1.86
500$ 1.53
1000$ 1.42
2000$ 1.41
N/A 0$ 2.19
Tape & Reel (TR) 5000$ 1.41

Description

General part information

BSC320 Series

The BSC320N20NS3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.