Discrete Semiconductor Products

IV2Q171R0T3

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GEN2, SIC MOSFET, 1700V 1000MOHM

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Discrete Semiconductor Products

Active

GEN2, SIC MOSFET, 1700V 1000MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	IV2Q171R0T3

Current - Continuous Drain (Id) @ 25°C	6.7 A
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16.5 nC
Input Capacitance (Ciss) (Max) @ Vds	285 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	86 W
Rds On (Max) @ Id, Vgs	910 mOhm
Supplier Device Package	TO-247-3
Vgs (Max) [Max]	20 V, -5 V
Vgs(th) (Max) @ Id	4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	50	$ 5.64

General part information

GEN2, SIC MOSFET, 1700V 1000MOHM

Technical documentation and resources