BUK9M10-30EX

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MOSFET N-CH 30V 54A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 30V 54A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9M10-30EX

Current - Continuous Drain (Id) @ 25°C	54 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1249 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	55 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.8 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

Part	Mounting Type	Vgs (Max)	Grade	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Qualification	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP BUK9M10-30EX	Surface Mount	10 V	Automotive	30 V	LFPAK33	MOSFET (Metal Oxide)	12.2 nC	55 W	-55 °C	175 ░C	N-Channel	AEC-Q101	54 A	1249 pF	2.1 V	5 V	7.8 mOhm

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General part information

N-Channel 30 V 54A (Tc) 55W (Tc) Surface Mount LFPAK33

Technical documentation and resources