Discrete Semiconductor Products
PMN30ENEAX
ActiveNexperia USA Inc.
TRANSISTOR MOSFET N-CH 40V 5.4A 6-PIN TSOP T/R
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
PMN30ENEAX
ActiveNexperia USA Inc.
TRANSISTOR MOSFET N-CH 40V 5.4A 6-PIN TSOP T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PMN30ENEAX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.4 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.7 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 440 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-457, SC-74 |
| Power Dissipation (Max) | 667 mW, 7.5 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 30 mOhm |
| Supplier Device Package | 6-TSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.72 | |
Description
General part information
PMN30ENEA Series
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources