Discrete Semiconductor Products

IRF60B217

Obsolete

MOSFET, N-CH, 60V, 60A, TO-220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET, N-CH, 60V, 60A, TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRF60B217

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	66 nC
Input Capacitance (Ciss) (Max) @ Vds	2230 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs
INFINEON IRF60B217	3.7 V	2230 pF	83 W	Through Hole	6 V 10 V	PG-TO220-3-1	60 V	60 A	MOSFET (Metal Oxide)	N-Channel	TO-220-3	66 nC	20 V	175 °C	-55 °C	9 mOhm
INFINEON IRF60B217	3.7 V	2230 pF	83 W	Through Hole	6 V 10 V	TO-220AB	60 V	60 A	MOSFET (Metal Oxide)	N-Channel	TO-220-3	66 nC	20 V	175 °C	-55 °C	9 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 60A (Tc) 83W (Tc) Through Hole TO-220AB

Technical documentation and resources