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HMC395
RF and Wireless

HMC395

LTB
Analog Devices Inc./Maxim Integrated

INGAP HBT GAIN BLOCK AMPLIFIER CHIP, DC - 4 GHZ

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HMC395
RF and Wireless

HMC395

LTB
Analog Devices Inc./Maxim Integrated

INGAP HBT GAIN BLOCK AMPLIFIER CHIP, DC - 4 GHZ

Technical Specifications

Parameters and characteristics for this part

SpecificationHMC395
Current - Supply54 mA
Frequency [Max]4 GHz
Frequency [Min]0 Hz
Gain16 dBi
Mounting TypeSurface Mount
Noise Figure4.5 dB
P1dB16 dBm
Package / CaseDie
RF TypeVSAT
Supplier Device PackageDie
Test Frequency [Max]4 GHz
Test Frequency [Min]0 Hz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTray 50$ 37.27<3d
100$ 35.94
150$ 35.20
250$ 34.30

Description

General part information

HMC395-DIE Series

The HMC395 die is a GaAs InGaP Heterojunction Bi-polar Transistor (HBT) Gain Block MMIC DC - 4 GHz amplifier. This amplifier die can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17dBm output power. The HMC395 offers 16 dB of gain and an output IP3 of +31dBm while requiring only 54mA from a +5V supply.The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC395 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm²) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1mil) diameter wire bonds of minimal length 0.5mm (20mils).ApplicationsMicrowave & VSAT RadiosTest EquipmentMilitary EW, ECM, C³ISpace Telecom