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TO-220AB PKG
Discrete Semiconductor Products

IRL40B209

Obsolete
INFINEON

STRONGIRFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 1.25 MOHM;

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TO-220AB PKG
Discrete Semiconductor Products

IRL40B209

Obsolete
INFINEON

STRONGIRFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 1.25 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRL40B209
Current - Continuous Drain (Id) @ 25°C195 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]270 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]15140 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)375 W
Rds On (Max) @ Id, Vgs1.25 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IRL40B209 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources