IPB60R125CFD7ATMA1
ActiveINFINEON’S 600V COOLMOS™ CFD7 SUPERJUNCTION POWER MOSFET IPB60R125CFD7 IN D²PAK PACKAGE
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IPB60R125CFD7ATMA1
ActiveINFINEON’S 600V COOLMOS™ CFD7 SUPERJUNCTION POWER MOSFET IPB60R125CFD7 IN D²PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB60R125CFD7ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1503 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 92 W |
| Rds On (Max) @ Id, Vgs | 125 mOhm |
| Supplier Device Package | PG-TO263-3-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB60R125 Series
This600V CoolMOS™ CFD7Superjunction MOSFET IPB60R125CFD7 in D2PAK package is Infineon's solution targeting resonant topologies in high powerSMPS, such asserver,telecomandEV chargingstations. It features remarkable efficiency improvements as well as lowest FOM RDS(on)x Qgand EOSS. Following theCFD2 SJ MOSFETfamily theCFD7comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.
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