Discrete Semiconductor Products

PN5135 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT NPN 30VCBO 25VCEO 4.0VEBO 100MA 25PF

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT NPN 30VCBO 25VCEO 4.0VEBO 100MA 25PF

Technical Specifications

Parameters and characteristics for this part

Specification	PN5135 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	300 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	40 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	25 V

Part	Package / Case	Package / Case	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package
Central Semiconductor Corp PN5135 TIN/LEAD	TO-226AA	TO-226-3 TO-92-3	40 MHz	25 V	1 V	150 °C	-65 °C	Through Hole	625 mW	300 nA	200 mA	NPN	50	TO-92-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.17
Mouser	N/A	5000	$ 0.17
		10000	$ 0.16

General part information

BIPOLAR TRANSISTORS - BJT NPN 30VCBO 25VCEO 4.0VEBO 100MA 25PF

Technical documentation and resources