Specification	RCJ450N20TL

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	80 nC
Input Capacitance (Ciss) (Max) @ Vds	4200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	1.56 W, 40 W
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	LPTS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

RCJ450 Series

Part	Vgs (Max)	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Rohm Semiconductor RCJ450N20TL	30 V	LPTS	Surface Mount	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	200 V	N-Channel	4200 pF	5 V	150 °C	45 A	80 nC	55 mOhm	1.56 W 40 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly