Discrete Semiconductor Products

NTP45N06

Obsolete

MOSFET N-CH 60V 45A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 45A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	NTP45N06

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Input Capacitance (Ciss) (Max) @ Vds	1725 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W, 2.4 W
Rds On (Max) @ Id, Vgs	26 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Technology
ON Semiconductor NTP45N06	10 V	1725 pF	-55 °C	175 ░C	46 nC	TO-220	TO-220-3	45 A	4 V	60 V	20 V	N-Channel	2.4 W 125 W	26 mOhm	Through Hole	MOSFET (Metal Oxide)
ON Semiconductor NTP45N06G	10 V	1725 pF	-55 °C	175 ░C	46 nC	TO-220	TO-220-3	45 A	4 V	60 V	20 V	N-Channel	2.4 W 125 W	26 mOhm	Through Hole	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 45A (Ta) 2.4W (Ta), 125W (Tj) Through Hole TO-220

Technical documentation and resources