Discrete Semiconductor Products

BSC076N04NDATMA1

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OPTIMOS™ 3 N+N DUAL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 7.6 MOHM;

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Discrete Semiconductor Products

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OPTIMOS™ 3 N+N DUAL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 7.6 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	BSC076N04NDATMA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	38 nC
Input Capacitance (Ciss) (Max) @ Vds	2950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max	2.3 W, 65 W
Rds On (Max) @ Id, Vgs	7.6 mOhm
Supplier Device Package	PG-TDSON-8-4
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Power - Max	Input Capacitance (Ciss) (Max) @ Vds	Configuration
INFINEON BSC076N06NS3GATMA1	50 nC	150 °C	-55 °C	Surface Mount	8-PowerTDFN	50 A	PG-TDSON-8-5	N-Channel	MOSFET (Metal Oxide)	4000 pF	60 V	7.6 mOhm	10 V	20 V	4 V	2.5 W 69 W
INFINEON BSC076N04NDATMA1	38 nC	175 °C	-55 °C	Surface Mount	8-PowerVDFN	20 A	PG-TDSON-8-4		MOSFET (Metal Oxide)		40 V	7.6 mOhm					4 V	2.3 W 65 W	2950 pF	2 N-Channel (Dual)

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General part information

Mosfet Array 40V 20A (Tc) 2.3W (Ta), 65W (Tc) Surface Mount PG-TDSON-8-4

Technical documentation and resources