Zenode.ai Logo
Beta
IRG7PH35UD-EP
Discrete Semiconductor Products

IRG7PH35UD-EP

Active
INFINEON

IGBT TRENCH 1200V 50A TO-247AD

Deep-Dive with AI

Search across all available documentation for this part.

IRG7PH35UD-EP
Discrete Semiconductor Products

IRG7PH35UD-EP

Active
INFINEON

IGBT TRENCH 1200V 50A TO-247AD

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRG7PH35UD-EP
null
PartSwitching EnergyOperating Temperature [Max]Operating Temperature [Min]Gate ChargeVoltage - Collector Emitter Breakdown (Max) [Max]Current - Collector (Ic) (Max) [Max]Power - Max [Max]IGBT TypeTd (on/off) @ 25°C [custom]Td (on/off) @ 25°C [custom]Test ConditionCurrent - Collector Pulsed (Icm)Supplier Device PackageReverse Recovery Time (trr)Package / CaseMounting TypeVce(on) (Max) @ Vge, Ic [Max]Td (on/off) @ 25°C [x]Td (on/off) @ 25°C [x]
1.06 mJ
620 µJ
150 °C
-55 °C
85 nC
1200 V
50 A
180 W
Trench
30 ns
160 ns
10 Ohm
15 V
20 A
600 V
60 A
TO-247AD
105 ns
TO-247-3
Through Hole
2.2 V
620 µJ
150 °C
-55 °C
130 nC
1200 V
50 A
179 W
Trench
10 Ohm
15 V
20 A
600 V
150 A
TO-247AD
TO-247-3
Through Hole
2.2 V
160 ns
-
620 µJ
150 °C
-55 °C
85 nC
1200 V
50 A
179 W
Trench
10 Ohm
15 V
20 A
600 V
150 A
TO-247AC
TO-247-3
Through Hole
2.2 V
160 ns
-
620 µJ
150 °C
-55 °C
130 nC
1200 V
50 A
179 W
Trench
10 Ohm
15 V
20 A
600 V
150 A
TO-247AD
TO-247-3
Through Hole
2.2 V
160 ns
-
1.06 mJ
620 µJ
150 °C
-55 °C
85 nC
1200 V
50 A
180 W
Trench
30 ns
160 ns
10 Ohm
15 V
20 A
600 V
60 A
TO-247AC
105 ns
TO-247-3
Through Hole
2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
0$ 0.00
416$ 0.00
4605$ 5.26
4605$ 5.26

Description

General part information

IRG7PH35 Series

IGBT Trench 1200 V 50 A 180 W Through Hole TO-247AD

Documents

Technical documentation and resources