Discrete Semiconductor Products

2N5086 APP TIN/LEAD

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BIPOLAR TRANSISTORS - BJT PNP 50VCBO 50VCEO 3.0VEBO 50MA 625MW

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT PNP 50VCBO 50VCEO 3.0VEBO 50MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	2N5086 APP TIN/LEAD

Current - Collector (Ic) (Max) [Max]	50 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Frequency - Transition	40 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max [Max]	1.5 W
Supplier Device Package	TO-92
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector (Ic) (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Transistor Type	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]
Central Semiconductor Corp 2N5086 APP TIN/LEAD	TO-92	150	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	50 mA	Through Hole	50 V	300 mV	50 nA	40 MHz	PNP	1.5 W	150 °C	-65 °C
Central Semiconductor Corp 2N5086 APP PBFREE	TO-92	150	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	50 mA	Through Hole	50 V	300 mV	50 nA	40 MHz	PNP	1.5 W	150 °C	-65 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.17
Mouser	N/A	6000	$ 0.17
		10000	$ 0.16

General part information

BIPOLAR TRANSISTORS - BJT PNP 50VCBO 50VCEO 3.0VEBO 50MA 625MW

Technical documentation and resources