Discrete Semiconductor Products

BSC220N20NSFDATMA1

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MOSFET, N-CH, 200V, 52A, 175DEG C, 214W ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Unknown

MOSFET, N-CH, 200V, 52A, 175DEG C, 214W ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	BSC220N20NSFDATMA1

Current - Continuous Drain (Id) @ 25°C	52 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	214 W
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	PG-TSON-8-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power Dissipation (Max) [Max]	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type
INFINEON BSC220N20NSFDATMA1	43 nC	8-PowerTDFN	214 W	MOSFET (Metal Oxide)	20 V	10 V	3680 pF	175 °C	-55 °C	52 A	200 V	PG-TSON-8-3	N-Channel	22 mOhm	Surface Mount

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General part information

MOSFET, N-CH, 200V, 52A, 175DEG C, 214W ROHS COMPLIANT: YES

Technical documentation and resources