Discrete Semiconductor Products

SI01P10-TP

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MOSFET P-CH 100V 1A SOT23

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Discrete Semiconductor Products

Active

MOSFET P-CH 100V 1A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	SI01P10-TP

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	100 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	3.2 nC
Input Capacitance (Ciss) (Max) @ Vds	388 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	770 mW
Rds On (Max) @ Id, Vgs	800 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Power Dissipation (Max) [Max]	Technology	Rds On (Max) @ Id, Vgs
MCC (Micro Commercial Components) SI01P10-TP	100 V	1 A	388 pF	SC-59 SOT-23-3 TO-236-3	Surface Mount	3 V	SOT-23	150 °C	-55 °C	3.2 nC	20 V	P-Channel	770 mW	MOSFET (Metal Oxide)	800 mOhm
MCC (Micro Commercial Components) SI01P10-TP	100 V	1 A	388 pF	SC-59 SOT-23-3 TO-236-3	Surface Mount	3 V	SOT-23	150 °C	-55 °C	3.2 nC	20 V	P-Channel	770 mW	MOSFET (Metal Oxide)	800 mOhm

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General part information

P-Channel 100 V 1A (Tj) 770mW Surface Mount SOT-23

Technical documentation and resources