Technical Specifications
Parameters and characteristics for this part
| Specification | ISC0803NLSATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.8 A, 37 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 2.5 W, 43 W |
| Rds On (Max) @ Id, Vgs | 16.9 mOhm |
| Supplier Device Package | PG-TDSON-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.78 | |
| 10 | $ 1.14 | |||
| Digi-Reel® | 1 | $ 1.78 | ||
| 10 | $ 1.14 | |||
| N/A | 0 | $ 1.77 | ||
| Tape & Reel (TR) | 5000 | $ 0.46 | ||
Description
General part information
ISC0803N Series
OptiMOS™ PD power MOSFETis Infineon’s portfolio targetingUSB-PDandadapter applications. ISC0803NLS in the SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction.OptiMOS™ PDfeatures quality products in compact, lightweight packages.
Documents
Technical documentation and resources