
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SIHU3N50DA-GE3 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 3 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 12 nC |
| Input Capacitance (Ciss) (Max) | 177 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | IPAK, TO-251AB, TO-251-3 Long Leads |
| Package Name | IPAK (TO-251) |
| Power Dissipation (Max) | 69 W |
| Rds On (Max) | 3.2 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.33 | 1m+ |
| Tube | 3000 | $ 0.33 | 1m+ | |
CAD
3D models and CAD resources for this part
Description
General part information
SIHU3 Series
N-Channel 500 V 3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)
Documents
Technical documentation and resources