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SIHU3N50DA-GE3
Discrete Semiconductor Products

SIHU3N50DA-GE3

LTB
Vishay Dale

MOSFET N-CHANNEL 500V 3A IPAK

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SIHU3N50DA-GE3
Discrete Semiconductor Products

SIHU3N50DA-GE3

LTB
Vishay Dale

MOSFET N-CHANNEL 500V 3A IPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIHU3N50DA-GE3
Current - Continuous Drain (Id) (Tc)3 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)12 nC
Input Capacitance (Ciss) (Max)177 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseIPAK, TO-251AB, TO-251-3 Long Leads
Package NameIPAK (TO-251)
Power Dissipation (Max)69 W
Rds On (Max)3.2 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.331m+
Tube 3000$ 0.331m+

CAD

3D models and CAD resources for this part

Description

General part information

SIHU3 Series

N-Channel 500 V 3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)

Documents

Technical documentation and resources