Discrete Semiconductor Products

PSMN1R3-80SSFJ

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NEXTPOWER 80 V, 1.2 MOHM, 335 AMP, N-CHANNEL MOSFET IN LFPAK88 PACKAGE

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Discrete Semiconductor Products

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NEXTPOWER 80 V, 1.2 MOHM, 335 AMP, N-CHANNEL MOSFET IN LFPAK88 PACKAGE

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R3-80SSFJ

Current - Continuous Drain (Id) @ 25°C	335 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	246 nC
Input Capacitance (Ciss) (Max) @ Vds	16647 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1235
Power Dissipation (Max)	341 W
Rds On (Max) @ Id, Vgs	1.2 mOhm
Supplier Device Package	LFPAK88 (SOT1235)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

NextPower 80 V, 1.2 mOhm, 335 Amp, N-channel MOSFET in LFPAK88 package

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. PSMN1R3-80SSFJ	LFPAK88 (SOT1235)	246 nC	80 V	MOSFET (Metal Oxide)	Surface Mount	175 °C	-55 °C	1.2 mOhm	335 A	16647 pF	N-Channel	SOT-1235	20 V	341 W	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	228	$ 8.21

General part information

NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.

Technical documentation and resources