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Toshiba-TP89R103NL,LQ MOSFETs Trans MOSFET N-CH Si 30V 15A 8-Pin SOP T/R
Discrete Semiconductor Products

TP89R103NL,LQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0091 Ω@10V, SOP-8, U-MOSⅧ-H

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Toshiba-TP89R103NL,LQ MOSFETs Trans MOSFET N-CH Si 30V 15A 8-Pin SOP T/R
Discrete Semiconductor Products

TP89R103NL,LQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.0091 Ω@10V, SOP-8, U-MOSⅧ-H

Technical Specifications

Parameters and characteristics for this part

SpecificationTP89R103NL,LQ
Current - Continuous Drain (Id) @ 25°C15 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]9.8 nC
Input Capacitance (Ciss) (Max) @ Vds820 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case0.154 in
Package / Case8-SOIC
Package / Case3.9 mm
Power Dissipation (Max) [Max]1 W
Rds On (Max) @ Id, Vgs9.1 mOhm
Supplier Device Package8-SOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 1806$ 1.01

Description

General part information

TP89R103NL Series

12V - 300V MOSFETs, N-ch MOSFET, 30 V, 0.0091 Ω@10V, SOP-8, U-MOSⅧ-H

Documents

Technical documentation and resources

TP89R103NL,LQ | Datasheet

Datasheet

Derating of the MOSFET Safe Operating Area

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes

Application Note

Resonant Circuits and Soft Switching

Application Note

Hints and Tips for Thermal Design part3

Application Note

MOSFET SPICE model grade

Application Note

Simplified CFD Model Application Note

Application Note

Electrical Characteristics: Power MOSFET Application Notes

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes

Application Note

Calculating the Temperature of Discrete Semiconductor Devices

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode

Application Note

Selection Guide MOSFETs 2025 Rev1.0

Catalog

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes

Application Note

Structures and Characteristics: Power MOSFET Application Notes

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices

Application Note

TP89R103NL Data sheet/Japanese

Data sheet

Motor Control (Vacuum Cleaners)

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes

Application Note

MOSFET Self-Turn-On Phenomenon

Application Note

RC Snubbers for Step-Down Converters

Application Note

Maximum Ratings: Power MOSFET Application Notes

Application Note

Avalanche energy calculation

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2

Application Note

MOSFET Secondary Breakdown

Application Note