Discrete Semiconductor Products

PMR370XN,115

Obsolete

MOSFET N-CH 30V 840MA SC75

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 840MA SC75

Technical Specifications

Parameters and characteristics for this part

Specification	PMR370XN,115

Current - Continuous Drain (Id) (Tc)	840 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	0.65 nC
Input Capacitance (Ciss) (Max)	37 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-416, SC-75
Package Name	SC-75
Power Dissipation (Max)	530 mW
Rds On (Max)	440 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

Part	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Current - Continuous Drain (Id) (Tc)	Package Name	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	FET Type	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max)	Vgs (Max)	Vgs(th) (Max)	Technology	Gate Charge (Max)
NXP USA Inc. PMR370XN,115	2.5 V	4.5 V	840 mA	SC-75	Surface Mount	-55 °C	150 °C	SC-75 SOT-416	N-Channel	37 pF	30 V	530 mW	440 mOhm	12 V	1.5 V	MOSFET (Metal Oxide)	0.65 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 840mA (Tc) 530mW (Tc) Surface Mount SC-75

Technical documentation and resources