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TO-220AB PKG
Discrete Semiconductor Products

IRFB4620PBF

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INFINEON

POWER MOSFET, N CHANNEL, 200 V, 25 A, 0.06 OHM, TO-220AB, THROUGH HOLE

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TO-220AB PKG
Discrete Semiconductor Products

IRFB4620PBF

Active
INFINEON

POWER MOSFET, N CHANNEL, 200 V, 25 A, 0.06 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB4620PBF
Current - Continuous Drain (Id) @ 25°C25 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1710 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]144 W
Rds On (Max) @ Id, Vgs72.5 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 502$ 2.08
Tube 1$ 2.24
10$ 2.27
50$ 1.19
100$ 1.16
500$ 0.97
1000$ 0.89
2000$ 0.83
5000$ 0.82
NewarkEach 1$ 2.59
10$ 1.35
100$ 1.22
500$ 1.00
1000$ 0.93
3000$ 0.86
5000$ 0.86

Description

General part information

IRFB4620 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.