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BAS21PGX
Discrete Semiconductor Products

BAS21PGX

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Nexperia USA Inc.

DUAL ISOLATED HIGH-VOLTAGE SWITCHING DIODE

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BAS21PGX
Discrete Semiconductor Products

BAS21PGX

Active
Nexperia USA Inc.

DUAL ISOLATED HIGH-VOLTAGE SWITCHING DIODE

Technical Specifications

Parameters and characteristics for this part

SpecificationBAS21PGX
Current - Average Rectified (Io) (per Diode)125 mA
Current - Reverse Leakage @ Vr100 nA
Diode Configuration2 Independent
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Package / CaseSOT-353, SC-70-5, 5-TSSOP
QualificationAEC-Q101
Reverse Recovery Time (trr)50 ns
Speed200 mA
SpeedAny Speed
Supplier Device Package5-TSSOP
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]250 V
Voltage - Forward (Vf) (Max) @ If1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 9$ 0.46

Description

General part information

BAS21PG Series

Dual high-voltage switching diode encapsulated in a very small SOT353 (SC-88A) Surface-Mounted Device (SMD) plastic package.