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TO-220AB PKG
Discrete Semiconductor Products

IRFB7434PBF

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INFINEON

STRONGIRFET™ N-CHANNEL MOSFET ; TO-220 PACKAGE; 1.6 MOHM;

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TO-220AB PKG
Discrete Semiconductor Products

IRFB7434PBF

Active
INFINEON

STRONGIRFET™ N-CHANNEL MOSFET ; TO-220 PACKAGE; 1.6 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB7434PBF
Current - Continuous Drain (Id) @ 25°C195 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs324 nC
Input Capacitance (Ciss) (Max) @ Vds10820 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)294 W
Rds On (Max) @ Id, Vgs1.6 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 913$ 3.24
Tube 1$ 2.36
10$ 1.54
100$ 1.07
500$ 1.06
MouserN/A 1$ 2.78
10$ 2.32
25$ 1.65
100$ 1.56
500$ 1.20
1000$ 1.10
5000$ 1.06

Description

General part information

IRFB7434 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources