Discrete Semiconductor Products

IPU60R1K5CEBKMA1

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INFINEON

MOSFET N-CH 600V 3.1A TO251

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Discrete Semiconductor Products

IPU60R1K5CEBKMA1

Unknown

INFINEON

MOSFET N-CH 600V 3.1A TO251

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPU60R1K5CEBKMA1

Current - Continuous Drain (Id) @ 25°C	3.1 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.4 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Power Dissipation (Max)	28 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPU60R Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPU60R2K0C6BKMA1	10 V	150 °C	-55 °C	22.3 W	N-Channel	6.7 nC	3.5 V	600 V	2 Ohm	Through Hole	140 pF	2.4 A	PG-TO251-3	20 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA
INFINEON IPU60R950C6AKMA1	10 V	150 °C	-55 °C		N-Channel	13 nC	3.5 V	600 V	950 mOhm	Through Hole		4.4 A	PG-TO251-3	20 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	280 pF	37 W
INFINEON IPU60R2K1CEBKMA1	10 V	150 °C	-40 °C		N-Channel	6.7 nC	3.5 V	600 V	2.1 Ohm	Through Hole	140 pF	2.3 A	PG-TO251-3	20 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA		22 W
INFINEON IPU60R2K0C6AKMA1	10 V	150 °C	-55 °C	22.3 W	N-Channel	6.7 nC	3.5 V	600 V	2 Ohm	Through Hole	140 pF	2.4 A	PG-TO251-3	20 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA
INFINEON IPU60R1K4C6BKMA1	10 V	155 °C	-55 °C		N-Channel		3.5 V	600 V	1.4 Ohm	Through Hole	200 pF	3.2 A	PG-TO251-3	20 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA		28.4 W	9.4 nC
INFINEON IPU60R1K0CEBKMA1	10 V	150 °C	-40 °C		N-Channel	13 nC	3.5 V	600 V		Through Hole		4.3 A		20 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	280 pF	37 W		1 Ohm
INFINEON IPU60R1K5CEAKMA1		150 °C	-40 °C		N-Channel		3.5 V	600 V	1.5 Ohm	Through Hole	200 pF	3.1 A	PG-TO251-3		MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA			9.4 nC
INFINEON IPU60R1K5CEBKMA1	10 V	150 °C	-40 °C		N-Channel		3.5 V	600 V	1.5 Ohm	Through Hole	200 pF	3.1 A		20 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA		28 W	9.4 nC
INFINEON IPU60R3K4CEAKMA1	10 V	150 °C	-40 °C		N-Channel	4.6 nC	3.5 V	600 V	3.4 Ohm	Through Hole		2.6 A	PG-TO251-3	20 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	93 pF
INFINEON IPU60R600C6BKMA1	10 V	150 °C	-55 °C		N-Channel		3.5 V	600 V	600 mOhm	Through Hole	440 pF	7.3 A	PG-TO251-3	20 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA		63 W	20.5 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

IPU60R Series

N-Channel 600 V 3.1A (Tc) 28W (Tc) Through Hole TO-251

Documents

Technical documentation and resources