Discrete Semiconductor Products

2N6297 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT PNP 80VCBO 80VCEO 5.0VEBO 5.0A 50W

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT PNP 80VCBO 80VCEO 5.0VEBO 5.0A 50W

Technical Specifications

Parameters and characteristics for this part

Specification	2N6297 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	4 A
Current - Collector Cutoff (Max) [Max]	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750
Frequency - Transition	4 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-213AA, TO-66-2
Power - Max [Max]	50 W
Supplier Device Package	TO-66
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Transistor Type	Supplier Device Package	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Power - Max [Max]
Central Semiconductor Corp 2N6297 TIN/LEAD	PNP - Darlington	TO-66	Through Hole	4 A	3 V	TO-213AA TO-66-2	200 °C	-65 °C	500 çA	80 V	750	4 MHz	50 W

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General part information

BIPOLAR TRANSISTORS - BJT PNP 80VCBO 80VCEO 5.0VEBO 5.0A 50W

Technical documentation and resources

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