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PMBTA44-QR
Discrete Semiconductor Products

PMBTA44-QR

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Nexperia USA Inc.

400 V, 0.3 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

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PMBTA44-QR
Discrete Semiconductor Products

PMBTA44-QR

Active
Nexperia USA Inc.

400 V, 0.3 A NPN HIGH-VOLTAGE LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPMBTA44-QR
Current - Collector (Ic) (Max) [Max]300 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]50
Frequency - Transition20 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]250 mW
QualificationAEC-Q101
Supplier Device PackageTO-236AB
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic750 mV
Voltage - Collector Emitter Breakdown (Max) [Max]400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.17

Description

General part information

PMBTA44-Q Series

NPN high-voltage low VCEsattransistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.