Discrete Semiconductor Products

IKW50N60TAFKSA1

Obsolete

IGBT TRENCH/FS 600V 80A TO247-3

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Discrete Semiconductor Products

Obsolete

IGBT TRENCH/FS 600V 80A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IKW50N60TAFKSA1

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	310 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-247-3
Power - Max [Max]	333 W
Reverse Recovery Time (trr)	143 ns
Supplier Device Package	PG-TO247-3-1
Switching Energy	2.6 mJ
Td (on/off) @ 25°C [custom]	26 ns
Td (on/off) @ 25°C [custom]	299 ns
Test Condition	15 V, 7 Ohm, 50 A, 400 V
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Switching Energy	Reverse Recovery Time (trr)	IGBT Type	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type	Current - Collector Pulsed (Icm)	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Test Condition	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C
INFINEON IKW50N60TAFKSA1	2.6 mJ	143 ns	Trench Field Stop	310 nC	600 V	TO-247-3	Through Hole	150 A	PG-TO247-3-1	80 A	7 Ohm 15 V 50 A 400 V	26 ns	299 ns	175 °C	-40 °C	333 W	2 V
INFINEON IKW50N120CS7XKSA1	2.2 mJ 2.8 mJ	165 ns	Trench Field Stop		1200 V	TO-247-3	Through Hole	150 A	PG-TO247-3	82 A	2.3 Ohm 15 V 50 A 600 V			175 °C	-40 °C	428 W	2 V	29 ns 170 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 600 V 80 A 333 W Through Hole PG-TO247-3-1

Technical documentation and resources