
Discrete Semiconductor Products
RF101L2STE25
NRNDRohm Semiconductor
FAST / ULTRAFAST DIODE, 200 V, 1 A, SINGLE, 870 MV, 25 NS, 20 A
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DocumentsRF101L2STE25 | Datasheet

Discrete Semiconductor Products
RF101L2STE25
NRNDRohm Semiconductor
FAST / ULTRAFAST DIODE, 200 V, 1 A, SINGLE, 870 MV, 25 NS, 20 A
Deep-Dive with AI
DocumentsRF101L2STE25 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | RF101L2STE25 |
|---|---|
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 10 ÁA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Package / Case | DO-214AC, SMA |
| Reverse Recovery Time (trr) | 25 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | PMDS |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 200 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 870 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RF101L2S Series
The RF101L2STE25 is a silicon epitaxial Fast-recovery Diode for general rectification application.
Documents
Technical documentation and resources