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ROHM PTZTE2530B
Discrete Semiconductor Products

RF101L2STE25

NRND
Rohm Semiconductor

FAST / ULTRAFAST DIODE, 200 V, 1 A, SINGLE, 870 MV, 25 NS, 20 A

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ROHM PTZTE2530B
Discrete Semiconductor Products

RF101L2STE25

NRND
Rohm Semiconductor

FAST / ULTRAFAST DIODE, 200 V, 1 A, SINGLE, 870 MV, 25 NS, 20 A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationRF101L2STE25
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr10 ÁA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Package / CaseDO-214AC, SMA
Reverse Recovery Time (trr)25 ns
Speed500 ns, 200 mA
Supplier Device PackagePMDS
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If [Max]870 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.54
MouserN/A 1500$ 0.10
9000$ 0.09
24000$ 0.09
NewarkEach (Supplied on Cut Tape) 1$ 0.20

Description

General part information

RF101L2S Series

The RF101L2STE25 is a silicon epitaxial Fast-recovery Diode for general rectification application.

Documents

Technical documentation and resources