Discrete Semiconductor Products

IDH05S60CAKSA1

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DIODE SIL CARB 600V 5A PGTO2202

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Discrete Semiconductor Products

Unknown

DIODE SIL CARB 600V 5A PGTO2202

Technical Specifications

Parameters and characteristics for this part

Specification	IDH05S60CAKSA1

Capacitance @ Vr, F	240 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	70 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO220-2-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Speed	Supplier Device Package	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]
INFINEON IDH05S120AKSA1	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky	5 A	1.8 V 5 A	250 pF	500 mA	PG-TO220-2-2	TO-220-2	Through Hole	120 µA	0 ns	1.2 kV
INFINEON IDH05S60CAKSA1	175 ░C	-55 °C	SiC (Silicon Carbide) Schottky	5 A		240 pF	500 mA	PG-TO220-2-2	TO-220-2	Through Hole	70 µA	0 ns	600 V	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 600 V 5A Through Hole PG-TO220-2-2

Technical documentation and resources

No documents available