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INFINEON IKZA75N65EH7XKSA1
Discrete Semiconductor Products

IKW40N65RH5XKSA1

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INFINEON

THE IKW40N65RH5 IS A 650 V, 40 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE

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INFINEON IKZA75N65EH7XKSA1
Discrete Semiconductor Products

IKW40N65RH5XKSA1

Active
INFINEON

THE IKW40N65RH5 IS A 650 V, 40 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE

Technical Specifications

Parameters and characteristics for this part

SpecificationIKW40N65RH5XKSA1
Current - Collector (Ic) (Max) [Max]74 A
Gate Charge95 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-247-3
Power - Max [Max]250 W
Supplier Device PackagePG-TO247-3
Switching Energy120 µJ, 160 µJ
Td (on/off) @ 25°C [custom]18 ns
Td (on/off) @ 25°C [custom]165 ns
Test Condition15 Ohm, 400 V, 15 V, 20 A
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 6.44
Tube 1$ 7.00
30$ 4.02
120$ 3.36
510$ 2.88
1020$ 2.85
NewarkEach 1$ 8.17
10$ 7.85
25$ 5.40
50$ 5.09
100$ 4.78
480$ 4.58
720$ 4.35

Description

General part information

IKW40N65 Series

650 V, 40 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in TO-247-3 package. The ultra-fast 650 V hard-switchingTRENCHSTOP™ 5 H5IGBT benefits very low switching losses at switching speed above 30 kHz. Combination of ultra-fastTRENCHSTOP™ 5 H5IGBT with half-ratedfreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discreteenables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.