Discrete Semiconductor Products

IKW75N65RH5XKSA1

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INFINEON

THE IKW75N65RH5 IS A 650 V, 75 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE

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DocumentsDatasheet Technical Data Sheet EN

Discrete Semiconductor Products

IKW75N65RH5XKSA1

Active

INFINEON

THE IKW75N65RH5 IS A 650 V, 75 A TRENCHSTOP™ 5 H5 HYBRID COOLSIC™ IGBT DISCRETE

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IKW75N65RH5XKSA1

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	300 A
Gate Charge	168 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	395 W
Supplier Device Package	PG-TO247-3
Switching Energy	300 µJ, 360 µJ
Td (on/off) @ 25°C	180 ns, 26 ns
Test Condition	15 V, 9 Ohm, 400 V, 37.5 A
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

IKW75N65 Series

Part	IGBT Type	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Switching Energy	Current - Collector Pulsed (Icm)	Supplier Device Package	Gate Charge	Mounting Type	Reverse Recovery Time (trr)	Operating Temperature [Max]	Operating Temperature [Min]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Test Condition	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic [Max]	Td (on/off) @ 25°C [Min]	Td (on/off) @ 25°C [Max]	Qualification	Grade
INFINEON IKW75N65EH5XKSA1	Trench	2.1 V	650 V	TO-247-3	90 A	395 W	2.3 mJ 900 µJ	300 A	PG-TO247-3	160 nC	Through Hole	92 ns	175 °C	-40 °C	174 ns	28 ns	8 Ohm 15 V 75 A 400 V
INFINEON IKW75N65RH5XKSA1	Trench Field Stop	2.1 V	650 V	TO-247-3	80 A	395 W	300 µJ 360 µJ	300 A	PG-TO247-3	168 nC	Through Hole		175 °C	-55 °C			9 Ohm 15 V 37.5 A 400 V	26 ns 180 ns
INFINEON IKW75N65SS5XKSA1	Trench Field Stop		650 V	TO-247-3	80 A	395 W	450 µJ 750 µJ	300 A	PG-TO247-3	164 nC	Through Hole		175 °C	-40 °C					1.7 V	22 ns	145 ns
INFINEON IKW75N65ET7XKSA1	Trench Field Stop		650 V	TO-247-3	80 A	333 W	1.23 mJ 2.17 mJ	225 A	PG-TO247-3	435 nC	Through Hole		175 °C	-40 °C			4.7 Ohm 15 V 75 A 400 V	28 ns 310 ns	1.65 V			AEC-Q101	Automotive
INFINEON IKW75N65EL5XKSA1			650 V	TO-247-3	80 A	536 W	1.61 mJ 3.2 mJ	300 A	PG-TO247-3	436 nC	Through Hole	114 ns	175 °C	-40 °C	275 ns	40 ns	4 Ohm 15 V 75 A 400 V		1.35 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 8.46
		10	$ 7.58
		50	$ 5.19
Digikey	N/A	240	$ 9.21
	Tube	1	$ 9.57
		30	$ 5.64
		120	$ 4.78
		510	$ 4.34
Newark	Each	1	$ 11.71
		10	$ 9.90
		25	$ 9.51
		50	$ 8.94
		100	$ 8.37
		480	$ 7.42
		720	$ 6.97

Description

General part information

IKW75N65 Series

650 V, 75 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ Schottky barrier diode in TO-247-3 package. The ultra-fast 650 V hard-switchingTRENCHSTOP™ 5 H5IGBT benefits very low switching losses at switching speed above 30 kHz. Combination of ultra-fastTRENCHSTOP™ 5 H5IGBT with half-ratedfreewheeling SiC Schottky barrier diodesinCoolSiC™ Hybrid discreteenables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.