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MCA03N10-TP
Discrete Semiconductor Products

MCA03N10-TP

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MCA03N10-TP
Discrete Semiconductor Products

MCA03N10-TP

Active

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMCA03N10-TP
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]15.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]690 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 C
Package / CaseTO-243AA
Power Dissipation (Max) [Max]0.5 W
Rds On (Max) @ Id, Vgs140 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 60000$ 0.22
60000$ 0.22
N/A 0$ 0.22
0$ 0.22

Description

General part information

MCA03 Series

N-Channel 100 V 3A 500mW Surface Mount SOT-89

Documents

Technical documentation and resources