TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

IRF5305STRRPBF

Obsolete

INFINEON

IR MOSFET™ P-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 60 MOHM;

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Search across all available documentation for this part.

DocumentsIR Part Numbering System Datasheet

Discrete Semiconductor Products

IRF5305STRRPBF

Obsolete

INFINEON

IR MOSFET™ P-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 60 MOHM;

Deep-Dive with AI

DocumentsIR Part Numbering System Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF5305STRRPBF

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	63 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF5305 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
INFINEON IRF5305SPBF	175 °C	-55 °C	10 V	31 A	1200 pF	60 mOhm	MOSFET (Metal Oxide)	Surface Mount	P-Channel	4 V	63 nC	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	55 V
INFINEON IRF5305PBF	155 °C 175 °C	-55 °C	10 V	31 A	1200 pF	60 mOhm	MOSFET (Metal Oxide)	Through Hole	P-Channel	4 V	63 nC	20 V	TO-220-3	TO-220AB	55 V	110 W
INFINEON IRF5305STRLPBF	175 °C	-55 °C	10 V	31 A	1200 pF	60 mOhm	MOSFET (Metal Oxide)	Surface Mount	P-Channel	4 V	63 nC	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	55 V
INFINEON IRF5305STRRPBF	175 °C	-55 °C	10 V	31 A	1200 pF	60 mOhm	MOSFET (Metal Oxide)	Surface Mount	P-Channel	4 V	63 nC	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	55 V
INFINEON IRF5305STRR	175 °C	-55 °C	10 V	31 A	1200 pF	60 mOhm	MOSFET (Metal Oxide)	Surface Mount	P-Channel	4 V	63 nC	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	55 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

Description

General part information

IRF5305 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.

Documents

Technical documentation and resources