Discrete Semiconductor Products
TPW1R306PL,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.00129 Ω@10V, DSOP ADVANCE, U-MOSⅨ-H
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Discrete Semiconductor Products
TPW1R306PL,L1Q
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.00129 Ω@10V, DSOP ADVANCE, U-MOSⅨ-H
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Technical Specifications
Parameters and characteristics for this part
| Specification | TPW1R306PL,L1Q |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 260 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 8100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 960 mW, 170 W |
| Rds On (Max) @ Id, Vgs | 1.29 mOhm |
| Supplier Device Package | 8-DSOP Advance |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
U-MOSIX-H Series
12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.00129 Ω@10V, DSOP Advance, U-MOSⅨ-H
Documents
Technical documentation and resources