Specification	1SS413CT,L3F

Capacitance @ Vr, F	3.9 pF
Current - Average Rectified (Io)	50 mA
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOD-882
Speed	200 mA
Speed	Any Speed
Supplier Device Package	CST2
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	550 mV

1SS413CT Series

Diodes, 20 V/0.05 A Schottky Barrier Diode, SOD-882(CST2)

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Technology	Capacitance @ Vr, F	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case
Toshiba Semiconductor and Storage 1SS413CT,L3F	20 V	200 mA	Any Speed	CST2	50 mA	Surface Mount	550 mV	500 nA	Schottky	3.9 pF	-55 °C	125 °C	SOD-882

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	27476	$ 0.16

General part information

Diodes, 20 V/0.05 A Schottky Barrier Diode, SOD-882(CST2)

Technical documentation and resources