Discrete Semiconductor Products

IDK04G65C5XTMA2

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SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 650 V, 4 A, 7 NC, TO-263 (D2PAK)

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Discrete Semiconductor Products

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SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN V SERIES, SINGLE, 650 V, 4 A, 7 NC, TO-263 (D2PAK)

Technical Specifications

Parameters and characteristics for this part

Specification	IDK04G65C5XTMA2

Capacitance @ Vr, F	130 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	670 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO263-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	4 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Supplier Device Package	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Speed
INFINEON IDK04G65C5XTMA2	PG-TO263-2	SiC (Silicon Carbide) Schottky	1.8 V	4 A	Surface Mount	670 µA	130 pF	0 ns	650 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 ░C	-55 °C	4 A	500 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 4A Surface Mount PG-TO263-2

Technical documentation and resources