Discrete Semiconductor Products

SSM6L35FU(TE85L,F)

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 20 V/-20 V, 0.18 A/-0.1 A, 4.0 Ω@2.5V/11 Ω@2.5V, SOT-363(US6)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 20 V/-20 V, 0.18 A/-0.1 A, 4.0 Ω@2.5V/11 Ω@2.5V, SOT-363(US6)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L35FU(TE85L,F)

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	100 mA, 180 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.2 V
FET Feature [Max]	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds [Max]	9.5 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	200 mW
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	US6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.18 A/-0.1 A, 4.0 Ω@2.5V/11 Ω@2.5V, SOT-363(US6)

Part	Operating Temperature [Max]	Operating Temperature [Min]	Configuration	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	FET Feature	FET Feature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM6L35FU(TE85L,F)	150 °C	-55 °C	N and P-Channel	20 V	6-TSSOP SC-88 SOT-363	US6	3 Ohm	Surface Mount	MOSFET (Metal Oxide)	100 mA 180 mA	200 mW	1.2 V	Logic Level Gate	9.5 pF	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	5379	$ 0.45

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.18 A/-0.1 A, 4.0 Ω@2.5V/11 Ω@2.5V, SOT-363(US6)

Technical documentation and resources