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INFINEON IKW25N120CS7XKSA1
Discrete Semiconductor Products

IKW25N120CS7XKSA1

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INFINEON

THE IKW25N120CS7 IS A 1200 V, 25 A IGBT7 S7 WITH ANTI-PARALLEL DIODE IN TO-247 PACKAGE

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INFINEON IKW25N120CS7XKSA1
Discrete Semiconductor Products

IKW25N120CS7XKSA1

Active
INFINEON

THE IKW25N120CS7 IS A 1200 V, 25 A IGBT7 S7 WITH ANTI-PARALLEL DIODE IN TO-247 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIKW25N120CS7XKSA1
Current - Collector (Ic) (Max) [Max]55 A
Current - Collector Pulsed (Icm)75 A
Gate Charge150 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-247-3
Power - Max [Max]250 W
Reverse Recovery Time (trr)150 ns
Supplier Device PackagePG-TO247-3
Switching Energy1.1 mJ, 1.2 mJ
Td (on/off) @ 25°C160 ns, 21 ns
Test Condition600 V, 15 V, 6 Ohm, 25 A
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 5.77
Tube 1$ 7.60
10$ 5.16
100$ 3.77
500$ 3.18
MouserN/A 1$ 6.82
10$ 6.74
25$ 3.92
100$ 3.28
240$ 3.27
480$ 2.77
NewarkEach 1$ 5.37
10$ 4.97
25$ 3.43
50$ 3.15
100$ 2.87
250$ 2.86
500$ 2.65

Description

General part information

IKW25N Series

Hard-switching 1200 V, 25 ATRENCHSTOP™ IGBT7S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsatto achieve very low conduction losses in target applications and the co-packed very soft and fast emitter controlled diode helps to minimize switching losses contibuiting to overall low total losses.

Documents

Technical documentation and resources