Discrete Semiconductor Products

QS8K2TR

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MOSFET 2N-CH 30V 3.5A TSMT8

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 3.5A TSMT8

Technical Specifications

Parameters and characteristics for this part

Specification	QS8K2TR

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	285 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.25 W
Rds On (Max) @ Id, Vgs	54 mOhm
Supplier Device Package	TSMT8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	FET Feature	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Mounting Type	Power - Max [Max]	Configuration	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs
Rohm Semiconductor QS8K2TR	Logic Level Gate	3.5 A	54 mOhm	MOSFET (Metal Oxide)	1.5 V	Surface Mount	1.25 W	2 N-Channel (Dual)	30 V	285 pF	TSMT8	150 °C	4.6 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.43

General part information

Mosfet Array 30V 3.5A 1.25W Surface Mount TSMT8

Technical documentation and resources

No documents available