Technical Specifications
Parameters and characteristics for this part
| Specification | IDB30E120ATMA1 |
|---|---|
| Current - Average Rectified (Io) | 50 A |
| Current - Reverse Leakage @ Vr | 100 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Reverse Recovery Time (trr) | 243 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | PG-TO263-3-2 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If [Max] | 2.15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
XDB30E120 Series
Ultra-soft 1200 V, 30 A emitter controlledsilicon power diodein a D2PAK TO-263 package is qualified with a Tj(max)of 150°C. The diodes are also available halogen-free according to IEC61249-2-21.
Documents
Technical documentation and resources
