Specification	NTHD4508NT1G

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4 nC
Input Capacitance (Ciss) (Max) @ Vds	180 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	1.13 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

NTHD4508N Series

Dual N-Channel ChipFET™ Power MOSFET 20V 4.1A 75mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Configuration	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Feature	Power - Max [Max]
ON Semiconductor NTHD4508NT1G	4 nC	3 A	Surface Mount	2 N-Channel (Dual)	75 mOhm	-55 °C	150 °C	ChipFET™	20 V	MOSFET (Metal Oxide)	180 pF	1.2 V	Logic Level Gate	1.13 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 20 V, 4.1 A, Dual N-Channel, ChipFET™

Technical documentation and resources