UPA2590T1H-T1-AT

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Discrete Semiconductor Products

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2590T1H-T1-AT

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	6.6 nC
Input Capacitance (Ciss) (Max) @ Vds	310 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SMD, Flat Lead
Power - Max [Max]	1.24 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	8-VSOF
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

N-Channel Mos Field Effect Transistor For Switching

Part	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Operating Temperature	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Drain to Source Voltage (Vdss)	Power - Max [Max]	Supplier Device Package
Renesas Electronics Corporation UPA2590T1H-T2-AT	MOSFET (Metal Oxide)	50 mOhm	4.5 A	Surface Mount	8-SMD Flat Lead	6.6 nC	N and P-Channel	150 °C	2.5 V	310 pF	Logic Level Gate	30 V	1.24 W	8-VSOF
Renesas Electronics Corporation UPA2590T1H-T1-AT	MOSFET (Metal Oxide)	50 mOhm	4.5 A	Surface Mount	8-SMD Flat Lead	6.6 nC	N and P-Channel	150 °C	2.5 V	310 pF	Logic Level Gate	30 V	1.24 W	8-VSOF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	544	$ 0.55

General part information

The UPA2590T1H is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources