Discrete Semiconductor Products

FDI047AN08A0

Obsolete

MOSFET N-CH 75V 80A I2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 75V 80A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	FDI047AN08A0

Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	138 nC
Input Capacitance (Ciss) (Max) @ Vds	6600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	310 W
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	TO-262 (I2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDI047AN08A0	TO-262 (I2PAK)	N-Channel	6600 pF	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	Through Hole	6 V 10 V	75 V	4 V	MOSFET (Metal Oxide)	20 V	310 W	4.7 mOhm	138 nC
ON Semiconductor FDI047AN08A0	TO-262 (I2PAK)	N-Channel	6600 pF	I2PAK TO-262-3 Long Leads TO-262AA	-55 °C	175 ░C	Through Hole	6 V 10 V	75 V	4 V	MOSFET (Metal Oxide)	20 V	310 W	4.7 mOhm	138 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 75 V 80A (Tc) 310W (Tc) Through Hole TO-262 (I2PAK)

Technical documentation and resources

No documents available