Specification	NTD50N03RT4G

Current - Continuous Drain (Id) @ 25°C	45 A, 7.8 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	11.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds	750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	50 W, 1.5 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTD50N03R Series

Power MOSFET 25 V, 45 A, Single N-Channel, DPAK

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
ON Semiconductor NTD50N03R	4.5 V	11.5 V	15 nC	20 V	DPAK	2 V	750 pF	1.5 W 50 W	7.8 A 45 A	Surface Mount	25 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	12 mOhm	-55 °C	175 ░C	N-Channel
ON Semiconductor NTD50N03RT4G	4.5 V	11.5 V	15 nC	20 V	DPAK	2 V	750 pF	1.5 W 50 W	7.8 A 45 A	Surface Mount	25 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	12 mOhm	-55 °C	175 ░C	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 25 V, 45 A, Single N-Channel, DPAK

Technical documentation and resources