Discrete Semiconductor Products

SIA437DJ-T1-GE3

Active

MOSFET P-CH 20V 29.7A PPAK SC70

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 20V 29.7A PPAK SC70

Technical Specifications

Parameters and characteristics for this part

Specification	SIA437DJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	29.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	2340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max) @ Id, Vgs	14.5 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIA437DJ-T1-GE3	150 °C	-50 °C	14.5 mOhm	MOSFET (Metal Oxide)	900 mV	20 V	Surface Mount	1.5 V 4.5 V	8 V	2340 pF	29.7 A	PowerPAK® SC-70-6	PowerPAK® SC-70-6	3.5 W 19 W	P-Channel	90 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 29.7A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources