Discrete Semiconductor Products

VS-1N3211R

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DIODE GEN PURP 300V 15A DO203AB

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Discrete Semiconductor Products

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DIODE GEN PURP 300V 15A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1N3211R

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	10 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-5, DO-203AB
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-203AB
Supplier Device Package	DO-5
Technology	Reverse Polarity, Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.5 V

Part	Package / Case	Supplier Device Package	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Technology	Speed [Min]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division VS-1N3211R	DO-203AB DO-5 Stud	DO-203AB	DO-5	300 V	Chassis Stud Mount	15 A	Reverse Polarity Standard	200 mA 500 ns	10 mA	1.5 V	175 ░C	-65 C

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General part information

Diode 300 V 15A Chassis, Stud Mount DO-203AB (DO-5)

Technical documentation and resources