Specification	FQPF19N10

Current - Continuous Drain (Id) @ 25°C	13.6 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	780 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

FQPF19N20C Series

Power MOSFET, N-Channel, QFET®, 200 V, 19 A, 170 mΩ, TO-220F

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FQPF19N10	25 nC	38 W	780 pF	MOSFET (Metal Oxide)	Through Hole	25 V	13.6 A	TO-220F-3	100 V	4 V	TO-220-3 Full Pack	N-Channel	10 V	-55 °C	175 ░C	100 mOhm
ON Semiconductor FQPF19N20C		43 W	1080 pF	MOSFET (Metal Oxide)	Through Hole	30 V	19 A	TO-220F-3	200 V	4 V	TO-220-3 Full Pack	N-Channel	10 V	-55 °C	150 °C		53 nC	170 mOhm
ON Semiconductor FQPF19N10	25 nC	38 W	780 pF	MOSFET (Metal Oxide)	Through Hole	25 V	13.6 A	TO-220F-3	100 V	4 V	TO-220-3 Full Pack	N-Channel	10 V	-55 °C	175 ░C	100 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	401	$ 0.75
		401	$ 0.75

Description

General part information

FQPF19N20C Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.