Discrete Semiconductor Products

TT8J11TCR

NRND

MOSFET 2P-CH 12V 3.5A 8TSST

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

MOSFET 2P-CH 12V 3.5A 8TSST

Technical Specifications

Parameters and characteristics for this part

Specification	TT8J11TCR

Configuration	2 P-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	12 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Gate Charge (Qg) (Max) @ Vgs	22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	650 mW
Rds On (Max) @ Id, Vgs	43 mOhm
Supplier Device Package	8-TSST
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs	FET Feature	FET Feature	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power - Max [Max]	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
Rohm Semiconductor TT8J11TCR	43 mOhm	Logic Level Gate	1.5 V	MOSFET (Metal Oxide)	3.5 A	1 V	12 V	150 °C	2 P-Channel (Dual)	2600 pF	650 mW	8-TSST	Surface Mount	22 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly