Specification	DMT6004SCT

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95.4 nC
Input Capacitance (Ciss) (Max) @ Vds	4556 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	2.3 W, 113 W
Rds On (Max) @ Id, Vgs	3.65 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

DMT6004SCT Series

N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMT6004SCT	Through Hole	TO-220-3	3.65 mOhm	2.3 W 113 W	10 V	100 A	TO-220-3	60 V	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	4 V	4556 pF	20 V	95.4 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.

Technical documentation and resources